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| SUM27N20-78 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.078 @ VGS = 10 V 0.083 @ VGS = 6 V ID (A) 27 26 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching APPLICATIONS D Isolated DC/DC converters - Primary-Side Switch D TO-263 G G DS S N-Channel MOSFET Top View SUM27N20-78 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 27 15.5 60 18 16.2 150b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72108 S-03005--Rev. A, 27-Jan-03 www.vishay.com PCB Mount (TO-263)c Symbol RthJA RthJC Limit 40 1.0 Unit _C/W _ 1 SUM27N20-78 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) Drain-Source on State Resistance Forward Transconductancea gfs VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 6 V, ID = 15 A VDS = 15 V, ID = 30 A 15 0.068 60 0.064 0.078 0.160 0.205 0.083 W S W 200 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 100 V, RL = 5 W ID ^ 20 A, VGEN = 10 V, RG = 2.5 W VDS = 100 V, VGS = 10 V, ID = 20 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2150 215 90 40 11 14 2 15 35 40 30 25 55 60 45 ns W 60 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 27 60 IF = 20 A, VGS = 0 V 1.0 115 IF = 50 A, di/dt = 100 A/ms m 7.5 0.43 1.5 170 12 1.02 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72108 S-03005--Rev. A, 27-Jan-03 SUM27N20-78 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 7 V 50 I D - Drain Current (A) I D - Drain Current (A) 6V 50 60 Vishay Siliconix Transfer Characteristics 40 40 30 30 20 5V 20 TC = 125_C 25_C -55 _C 10 3 V, 4 V 0 0 1 2 3 4 5 6 7 8 9 10 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C r DS(on) - On-Resistance ( W ) 0.16 On-Resistance vs. Drain Current g fs - Transconductance (S) 60 25_C 0.12 125_C 40 0.08 VGS = 6 V VGS = 10 V 20 0.04 0 0 10 20 30 40 50 60 0.00 0 10 20 30 40 50 60 ID - Drain Current (A) ID - Drain Current (A) Capacitance 3000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 2500 Ciss C - Capacitance (pF) 2000 16 VDS = 100 V ID = 20 A 12 1500 8 1000 Crss Coss 0 0 40 80 120 160 200 500 4 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Document Number: 72108 S-03005--Rev. A, 27-Jan-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM27N20-78 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on) - On-Resistance (W) (Normalized) 2.0 TJ = 150_C 10 TJ = 25_C 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 260 Drain Source Breakdown vs. Junction Temperature 100 V (BR)DSS (V) I Dav (a) 240 ID = 1.0 mA IAV (A) @ TA = 25_C 10 220 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 200 180 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72108 S-03005--Rev. A, 27-Jan-03 SUM27N20-78 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 30 100 Safe Operating Area 10 ms 25 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 20 10 100 ms 15 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms, dc 10 5 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72108 S-03005--Rev. A, 27-Jan-03 www.vishay.com 5 |
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